Josephson element - josephson element

Japanese: ジョセフソン素子 - じょせふそんそし
Josephson element - josephson element

A switching element that operates at low temperatures using the tunneling effect of current in a superconducting state (Josephson effect). Although there are problems with temperature, it has performance far superior to semiconductor elements, and it is expected to be integrated in the near future, and it is highly anticipated that the dream of LSI (large-scale integrated circuit) will emerge. The whole is kept at extremely low temperatures, and the two conductor parts are in a superconducting state, with a thin insulator of a few millionths of a millimeter sandwiched between them to create a sandwich junction structure. Since the insulator is very thin, current flows due to the tunneling effect, but no voltage is generated at the junction. However, when a certain current value is exceeded, the junction returns to its original insulator state, and a certain gap voltage (about 3 millivolts if the conductor is niobium) is generated. This switching speed is extremely fast and requires little power. If the junction capacitance is reduced by microfabrication, it can be switched in a few picoseconds (10 -12 seconds), and the power consumption is only a few microwatts (10 -6 watts). The product of these values ​​(picoseconds x microwatts) is four orders of magnitude smaller than that of semiconductor elements. The Josephson effect was predicted in 1962 by Josephson, a 22-year-old student at Cambridge University in the UK, and was demonstrated the following year by Bell Labs in the US.

[Ushio Kawabe]

[Reference] | Integrated Circuits
Structure of Josephson junction
©Shogakukan ">

Structure of Josephson junction


Source: Shogakukan Encyclopedia Nipponica About Encyclopedia Nipponica Information | Legend

Japanese:

超伝導状態における電流のトンネル効果(ジョセフソン効果)を利用した低温で動作するスイッチング素子。温度の点に問題はあるものの、半導体素子よりはるかに優れた性能をもち、近い将来に集積化されることが予想され、夢のLSI(大規模集積回路)が出現するものとして大いに期待されている。全体を極低温に保ち、2枚の導体部分は超伝導状態とし、その間に100万分の数ミリメートルの薄い絶縁体を挟んだサンドイッチ接合構造とする。絶縁体は非常に薄いので、トンネル効果による電流は流れるが、接合部には電圧が発生しない。しかしある電流値を超えると、接合部は本来の絶縁体に戻り、一定のギャップ電圧(導体がニオブの場合は約3ミリボルト)が発生する。このスイッチング速度はきわめて速く、所要電力も少ない。微細加工して接合容量を小さくすると、数ピコ秒(10-12秒)の時間でスイッチすることができ、しかも消費電力は数マイクロワット(10-6ワット)である。これらの値の積(ピコ秒×マイクロワット)は半導体素子に比べて4桁(けた)も小さい。なお、ジョセフソン効果は、イギリスのケンブリッジ大学の学生であった22歳のジョセフソンが1962年に予言したもので、翌年アメリカのベル研究所によって実証された。

[川邊 潮]

[参照項目] | 集積回路
ジョセフソン素子の構造
©Shogakukan">

ジョセフソン素子の構造


出典 小学館 日本大百科全書(ニッポニカ)日本大百科全書(ニッポニカ)について 情報 | 凡例

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