…For example, when SiCl4 gas is heated together with H2 , Si is precipitated. Chemical transport method is used to form compound thin films. This method is characterized by creating a temperature gradient in the reaction chamber. For example, Ga is placed on the high temperature side (up to 850°C) and AsCl3 gas is pumped in to generate volatile GaCl, which is then diffused to the low temperature side (up to 750°C) where it reacts with As4 , resulting in the deposition of a GaAs thin film. … *Some of the terminology used in reference to the "Chemical Transport Act" is listed below. Source | Heibonsha World Encyclopedia 2nd Edition | Information |
…例えばSiCl4ガスをH2とともに加熱するとSiが析出する。化合物薄膜の形成には化学輸送法が用いられる。この方法は反応槽に温度こう配をつけることが特徴で,例えば,高温側(~850℃)にGaをおいてここにAsCl3ガスを送り込んで揮発性のGaClを生成し,このガスを低温側(~750℃)に拡散させてAs4と反応させ,GaAsの薄膜を析出させる。… ※「化学輸送法」について言及している用語解説の一部を掲載しています。 出典|株式会社平凡社世界大百科事典 第2版について | 情報 |
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