A type of semiconductor memory for reading and writing. Abbreviation for dynamic random access memory. It is commonly used as the main memory for personal computers. It allows for high integration and is mass-produced in large capacity. DRAM stores electrical signals in tiny capacitors, so it is necessary to refresh the leaked charge by rewriting the same information at regular intervals. Another type of semiconductor memory called SRAM (static RAM) does not require refreshing and is fast, but it consumes a lot of power and is less integrated. DRAM is small, consumes little power, and is relatively fast, so it is in high demand as a key device for computers, imaging equipment, etc. The first DRAM was made by the American company Intel, which created a 1 kilobit DRAM with a built-in 7-bit counter with refresh function in 1970. This was followed by Texas Instruments in 1973, which created a 4 kilobit DRAM using one transistor and one capacitor, and with the advancement of semiconductor manufacturing technology thereafter, the density of DRAMs quadrupled in three years, and today the mainstream product has reached 2 gigabits. [Michinori Iwata] [Reference item] | |Source: Shogakukan Encyclopedia Nipponica About Encyclopedia Nipponica Information | Legend |
読み書き用の半導体メモリーの一種。dynamic random access memoryの略語。パソコン用のメインメモリーとして一般的に使われている。高集積化が可能で大容量のものが量産化されている。DRAMは電気信号を微小コンデンサーに蓄える方式であるため、電荷の漏れを一定の周期で同じ情報を書き込み直してリフレッシュさせる必要がある。別にSRAM(エスラム)(スタティックRAM)とよぶ半導体メモリーは、リフレッシュは不要で高速ではあるが、消費電力が大きく集積度も劣る。DRAMは小型、低消費電力で速度も比較的速いので、コンピュータ、画像装置などのキーデバイスとして需要は大きい。 アメリカのインテル社が1970年リフレッシュ動作の7ビットカウンター内蔵の1キロビットDRAMをつくったのが最初である。続いて、1973年にはテキサス・インスツルメント社がトランジスタ1個・コンデンサー1個で4キロビットのDRAMをつくり、その後、半導体製造技術の進歩に伴い3年で4倍と高集積化が世界で進められ、今日では主力品は2ギガビットに達している。 [岩田倫典] [参照項目] | |出典 小学館 日本大百科全書(ニッポニカ)日本大百科全書(ニッポニカ)について 情報 | 凡例 |
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