MOS IC (English spelling)

Japanese: MOS IC(英語表記)MOSIC
MOS IC (English spelling)

...Fairchild, which developed planar technology for transistors, immediately began applying it to ICs, and since then both companies have played leading roles in the IC industry.
[Development of MOS ICs]
Meanwhile, research into the surface properties of semiconductors has a long history, and in 1939 W. Schottky (1886-1976) proposed his theory of surface barriers, which is still used today in LSIs as the Schottky barrier. Also, in 1935 O. Heil applied for a fundamental patent for the modern MOS transistor (MOS stands for metal oxide semiconductor, a transistor made by sandwiching a thin insulating layer of silicon oxide or the like between a metal and a semiconductor).

From [Integrated Circuits]

...Fairchild, which developed planar technology for transistors, immediately began applying it to ICs, and since then both companies have played leading roles in the IC industry.
[Development of MOS ICs]
Meanwhile, research into the surface properties of semiconductors has a long history, and in 1939 W. Schottky (1886-1976) proposed his theory of surface barriers, which is still used today in LSIs as the Schottky barrier. Also, in 1935 O. Heil applied for a fundamental patent for the modern MOS transistor (MOS stands for metal oxide semiconductor, a transistor made by sandwiching a thin insulating layer of silicon oxide or the like between a metal and a semiconductor).

*Some of the terminology that refers to "MOS IC" is listed below.

Source | Heibonsha World Encyclopedia 2nd Edition | Information

Japanese:

…トランジスターでプレーナー技術を開発したフェアチャイルド社は,直ちにICへの応用を開始し,以後両社はIC産業において先導的役割を果たしてきた。
[MOS ICの発達]
 一方,半導体の表面物性に関する研究は長い歴史があり,1939年には,ショットキーW.Schottky(1886‐1976)の表面障壁の理論が出され,今日でもショットキーバリアSchottky barrierとしてLSIに利用されている。また,1935年にはヘイルO.Heilが現在のMOSトランジスター(MOSはmetal oxide semiconductorの略で,金属と半導体の間にケイ素酸化物などの薄い絶縁層をはさんで作ったトランジスター)の基本的特許を出願している。…

【集積回路】より

…トランジスターでプレーナー技術を開発したフェアチャイルド社は,直ちにICへの応用を開始し,以後両社はIC産業において先導的役割を果たしてきた。
[MOS ICの発達]
 一方,半導体の表面物性に関する研究は長い歴史があり,1939年には,ショットキーW.Schottky(1886‐1976)の表面障壁の理論が出され,今日でもショットキーバリアSchottky barrierとしてLSIに利用されている。また,1935年にはヘイルO.Heilが現在のMOSトランジスター(MOSはmetal oxide semiconductorの略で,金属と半導体の間にケイ素酸化物などの薄い絶縁層をはさんで作ったトランジスター)の基本的特許を出願している。…

※「MOS IC」について言及している用語解説の一部を掲載しています。

出典|株式会社平凡社世界大百科事典 第2版について | 情報

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